LLE16045X Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LLE16045X
6
handbook, halfpage
PL
(W)
4
2
MBD746
I _CQ =
40 mA
10 mA
3 mA
0
0
0.2
0.4
0.6
0.8
1
Pi (W)
V_CE = 24 V; f = 1650 MHz.
Fig.6 Load power as a function of input power.
15
hand_db_io_mok, halfpage
(dBc)
20
I _CQ =
3 mA
25
MBD747
30
35 ^{10 mA}
40
40 mA
45
0
1
2
3
4
Po _(av) (W)
V_CE = 24 V; f₁ = 1650 MHz; f₂ = 1650.2 MHz.
Fig.7 Intermodulation distortion as a function of
average output power.
Input and optimum load impedances
V_CE = 24 V; I_CQ = 40 mA (see Figs 8 and 9); typical values at P_L = P_L1.
f
Z_i
(GHz)
(Ω)
1.50
6.8 + j14.2
1.55
7.9 + j15.1
1.60
9.2 + j16.0
1.65
10.9 + j16.8
1.70
13.0 + j17.5
1.75
15.5 + j17.8
1.80
18.6 + j17.6
Z_L
(Ω)
6.1 + j8.3
5.8 + j7.8
5.6 + j7.3
5.4 + j6.9
5.2 + j6.4
5.0 + j6.0
4.8 + j5.5
1997 Feb 18
7