BYR29X-600_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – Ultrafast power diode

NXP Semiconductors
BYR29X-600
Ultrafast power diode
I_F
dl_F
dt
t_rr
Q_r
I_R
I_RM
time
25 %
100 %
003aac562
10³
t_rr
(ns)
10²
T_j = 25 ^°C
T_j = 100 ^°C
10
1
003aaa470
(2)
(1)
10
10²
dI_F/dt (A/μs)
Fig 7. Reverse recovery definitions; ramp recovery
10
I_RM
(A)
1
10^-1
T_j = 25 ^°C
T_j = 100 ^°C
10^-2
1
003aaa471
(2)
(1)
10
10²
dI_F/dt (A/μs)
Fig 8. Reverse recovery time as a function of rate of
change of forward current at indicated
temperatures; maximum values
I_F
time
V_F
V_FRM
V_F
time
001aab912
Fig 9. Peak reverse recovery current as a function of
rate of change of forward current at indicated
temperatures
Fig 10. Forward recovery definitions
BYR29X-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 July 2010
© NXP B.V. 2010. All rights reserved.
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