BUK9E08-55B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9E08-55B
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 15
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs;
Q_r
recovered charge
V_GS = -10 V; V_DS = 30 V; T_j = 25 °C
300
I_D
(A)
200
5
10
100
0
0
2
03nn52
4.8 _{Label is VGS (V)}
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
4
6
8
10
V_DS (V)
25
R_DSon
(mΩ)
20
15
10
5
0
0
Min Typ Max Unit
-
0.85 1.2 V
-
69
-
ns
-
72
-
nC
03nn51
5
10
15
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
03ng53
min
typ
max
120
g_fs
(S)
80
03nn49
10^−4
40
10^−5
10^−6
0
1
2
3
V_GS (V)
0
0
25
50
75
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9E08-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 May 2010
© NXP B.V. 2010. All rights reserved.
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