BUK9637-100E_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9637-100E
N-channel TrenchMOS logic level FET
60
I_D
(A)
40
003aah892
3
V_GS(th)
(V)
2.5
2
1.5
max
typ
003aah025
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
V_GS (V)
1
0.5
0
-60
min
0
60
120
180
T_j (°C)
Fig. 8. Transfer characteristics; drain current as a
Fig. 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aah026
min
typ max
80
R_DSon
(mΩ)
60
2.6
2.8
40
20
003aah895
3
4.5
V_GS(V) = 10
10^-6
0
1
2
3
V_GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0
15
30
45 _ID(A) 60
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK9637-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
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