BUK7Y7R2-60E_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 60 V, 7.2 m standard level MOSFET in LFPAK56

NXP Semiconductors
BUK7Y7R2-60E
N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56
160
I_D
(A)
120
003aai722
5
V_GS(th)
(V)
4
003aah027
max
3
typ
80
2
min
40
175°C
j
T_j = 25°C
0
0
1
2
3
4
5
6
V_GS (V)
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
1
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
10^-4
10^-5
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
16
R_DSon
12
8
5.5 V
003aai725
6V
6.5 V
7V
4
0
0
20
40
60
T_j = 25 °C; t_p = 300 μs
8V
V_GS = 10 V
15 V
80 100 120
I_D (A)
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y7R2-60E
Product data sheet
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6 November 2013
© NXP N.V. 2013. All rights reserved
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