BUK7Y3R5-40E_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56

NXP Semiconductors
BUK7Y3R5-40E
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
180
I_D
(A)
144
003aag960
5
V_GS(th)
(V)
4
003aah027
max
108
3
typ
72
2
min
36
175°C
T_j = 25°C
0
012345678
V_GS (V)
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
1
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aah028
min
typ max
10
R_DSon
5
(mΩ)
8
6
4
2
003aag970
6
6.5
7
8
V_GS(V) = 10
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0
50
100
150
I_D (A)
T_j = 25 °C; t_p = 300 µs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y3R5-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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