BUK7907-55AIE_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7907-55AIE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
80
-
ns
-
200 -
nC
400
ID ¹²
(A)
20
300
10
8.5
200
100
0
0
2
4
03ni65
8
VGS (V) = 7.5
7
6.5
6
5.5
4
4.5
6
8
10
VDS (V)
8
RDSon
(mΩ)
7
6
5
4
5
03ni66
10
15
20
VGS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7907-55AIE_2
Product data sheet
Rev. 02 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 14