BUK7905-40ATE_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7905-40ATE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
t_d(on)
t_r
t_d(off)
t_f
L_D
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
L_S
internal source
inductance
Source-drain diode
V_DS = 30 V; R_L = 1.2 Ω; V_GS = 10 V;
R_G(ext) = 10 Ω; T_j = 25 °C
from upper edge of mounting base to
centre of die; T_j = 25 °C
from source lead to source bond pad;
T_j = 25 °C
V_SD
source-drain voltage I_S = 40 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
35
-
ns
-
115 -
ns
-
155 -
ns
-
110 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
96
-
ns
-
224 -
nC
BUK7905-40ATE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15