BUK7510-100B Datasheet, PDF (7/16 Pages) List of Unclassifed Manufacturers – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7610-100B
TrenchMOS™ standard level FET
ID ³⁵⁰
(A)
300
250
20
10
8
03ng76
7
6.5
11
RDSon
(mΩ)
10
03ng75
200
5.5
9
150
100
50
VGS = 4.5 V
0
0
2
4
6
8
10
VDS (V)
8
7
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
13
RDSon
(mΩ)
03ng77
2.5
VGS = 6 V
a
12
6.5
2
9
7
11
8
10
1.5
03ng41
10
1
9
0.5
8
0
50
T_j = 25 °C
100
150
200
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (ºC)
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10281
Product data
Rev. 02 — 19 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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