BUK72150-55A_11 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK72150-55A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
350
R_DSon
(mΩ)
5.5 6 6.5 7
300
03np22
8
10
250
200
150
100
0
Label is V_GS (V)
5
10
15
20
I_D (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
03ne89
2
10
V_GS
a
(V)
8
1.5
03np17
VDD = 14 V
VDD = 44 V
6
1
4
0.5
2
0
-60
0
60
120
180
Tj (°C)
0
0
2
4
6
Q_G (nC)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Gate-source voltage as a function of gate
charge; typical values
BUK72150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 January 2011
© NXP B.V. 2011. All rights reserved.
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