BUK6E2R3-40C_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6E2R3-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 15
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
63
-
ns
-
127 -
nC
250
g_fs
(S)
200
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150
100
50
0
0
20
40
60
80
100
I_D (A)
100
I_D
(A)
80
10 5 4 3.8
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3.6
60
3.4
40
3.3
20
0
0
V_GS(V) = 3.2
0.2
0.4
0.6
0.8
1
V_DS(V)
Fig 5. Forward transconductance as a function of
drain current; typical values
8
R_DSon
(mΩ)
6
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Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
80
I_D
(A)
60
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4
40
2
0
0
5
10
15
20
V_GS (V)
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
V_GS(V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Transfer characteristics: drain current as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
BUK6E2R3-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© NXP B.V. 2010. All rights reserved.
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