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BUK654R0-75C Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET
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NXP Semiconductors
BUK654R0-75C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
72
-
ns
-
218 -
nC
160
ID
5
4.5
(A)
10
120
003aae377
VGS (V) = 4.0
3.8
100
ID
(A)
80
003aae378
60
80
3.6
40
Tj = 175 °C
40
3.4
25 °C
3.3
20
3.2
0
0
1
2
VDS (V) 3
Tj = 25 °C; tp = 300 μs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
0
0
1
2
3
4
VGS (V)
Fig 6.
VDS < ID x RDSon
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
20
RDSon
(mΩ)
15
003aae383
250
gfs
(S)
200
003aae379
150
10
100
5
50
0
0
4
Tj = 25 °C; ID = 25 A
8
12
VGS (V)
0
0
25
50
75
100
ID (A)
Fig 7. Drain-source on-state resistance as a function Fig 8. Forward transconductance as a function of
of gate-source voltage; typical values.
drain current; typical values
BUK654R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
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