BUK6228-55C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6228-55C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.9 1.2 V
-
39.9 -
ns
-
58.4 -
nC
40
g_fs
(S)
30
20
10
0
0
003aae901
10
20 _{ID (A)} 30
50
I_D
(A)
40
30
20
10
0
0
V_GS(V) = 10
003aae902
6.0 5.0
4.5
4.0
3.8
3.6
3.4
3.2
1
2
3
V_DS(V)
Fig 5. Forward transconductance as a function of
drain current; typical values
003aae903
40
I_D
(A)
30
20
10
0
0
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
100
R_DSon
(mΩ)
80
003aae904
60
40
20
0
0
5
10
15 _VGS(V) 20
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6228-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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