BUK6207-55C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6207-55C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.85 1.2 V
-
48
-
ns
-
86
-
nC
120
g_fs
(S)
90
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60
30
0
0
20
40
60
80
I_D (A)
T_j = 25°C; V_DS = 25 V
Fig 5. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
80
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60
40
T_j = 175 °C
T_j = 25 °C
20
100
I_D
(A)
80
V_GS (V) = 10 5 4.5
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4
60
3.8
40
3.6
20
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
T_j = 25°C; t_p = 300 μs
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
20
R_DSon
(mΩ)
15
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10
5
0
0
1
2
3
4
5
V_GS (V)
Fig 7.
V_DS = 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
4
8
12
16
V_GS (V)
T_j = 25°C; I_D 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK6207-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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