BUJD203AD_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
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Fig 7. Test circuit for collector-emitter sustaining
voltage
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
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1.2
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
I_C
(mA)
250
100
10
0
min _{VCE (V)}
V_CEOsus
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Fig 8. Oscilloscope display for collector-emitter
sustaining voltage test waveform
V_CEsat
(V) 0.5
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0.4
0.3
0.2
0.1
0
10^−1
1
10
I_C (A)
Fig 9. Collector-emitter saturation voltage as a
function of base current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJD203AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
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