BTA204X-800E Datasheet, PDF (7/13 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

NXP Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter Conditions
dV_D/dt
critical rate of
rise of off-state
voltage
V_DM = 67 %
V_DRM(max);
T_j = 125 C;
exponential
waveform; gate
open circuit
dI_com/dt
critical rate of
change of
commutating
current
V_DM = 400 V;
T_j = 125 C;
I_T(RMS) = 4 A;
dV_com/dt = 10 V/s;
gate open circuit
V_DM = 400 V;
T_j = 125 C;
I_T(RMS) = 4 A;
dV_com/dt = 0.1 V/s;
gate open circuit
t_gt
gate controlled I_TM = 20 A;
turn-on time V_D = V_DRM(max);
I_G = 0.1 A;
dI_G/dt = 5 A/s
BTA204X-600D
Min Typ Max
20 -
-
BTA204X-600E
Min Typ Max
30 -
-
BTA204X-600F Unit
Min Typ Max
50 -
- V/s
1.1 -
- 2.1 -
-
3
-
- A/s
4.5 -
-
8
-
- 15 -
- A/s
-
2
-
-
2
-
-
2
- s
1.6
V_GT
V_GT (25°C)
1.2
0.8
001aac334
3
I_GT(T_j)
I_GT(25°C)
(1)
2
(2)
(3)
1
001aac335
0.4
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
50
100
150
T_j (°C)
(1) T2 G
(2) T2+ G
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA204X_SER_D_E_F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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