BLF888_11 Datasheet, PDF (7/17 Pages) NXP Semiconductors – UHF power LDMOS transistor

NXP Semiconductors
7.2.2 DVB-T
9.5
PAR
(dB)
PAR
8.5
η_D
7.5
6.5
001aak647 ₅₀
η_D
(%)
40
30
20
22
G_p
(dB)
18
14
10
BLF888
UHF power LDMOS transistor
G_p
IMD_shldr
001aak648 _−10
IMD_shldr
(dB)
−20
−30
−40
5.5
10
400
500
600
700
800
900
f (MHz)
Fig 8.
P_L(AV) = 110 W; V_DS = 50 V; I_Dq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
6
−50
400
500
600
700
800
900
f (MHz)
Fig 9.
P_L(AV) = 110 W; V_DS = 50 V; I_Dq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
7.3 Impedance information
BLF888
Product data sheet
Z_L
drain
Z_i
gate
001aai086
Fig 10. Definition of transistor impedance
Table 8. Typical push-pull impedance
Simulated Z_i and Z_L device impedance; impedance info at V_DS = 50 V and P_L(PEP) = 600 W (DVB-T).
f
Z_i
Z_L
MHz


300
1.018  j1.350
5.565 + j0.747
325
1.045  j1.022
5.435 + j0.752
350
1.076  j0.722
5.303 + j0.746
375
1.110  j0.444
5.167 + j0.730
400
1.148  j0.183
5.030 + j0.704
425
1.190 + j0.064
4.892 + j0.668
450
1.238 + j0.299
4.754 + j0.622
475
1.291 + j0.526
4.617 + j0.567
500
1.351 + j0.746
4.481 + j0.504
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 21 January 2011
© NXP B.V. 2011. All rights reserved.
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