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| BLF879P_15 Datasheet, PDF (7/16 Pages) NXP Semiconductors – UHF power LDMOS transistor | |||
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NXP Semiconductors
BLF879P; BLF879PS
UHF power LDMOS transistor
7.3 Reliability
107
Years
106
105
104
001aam586
(1)
(2)
(3)
(4)
(5)
(6)
103
102 (7)
(8)
(9)
10
(10)
(11)
1
0
2
4
6
8
10
12
14
16
18
20
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) ï´ 1 / ï¤.
(1) Tj = 100 ï°C
(2) Tj = 110 ï°C
(3) Tj = 120 ï°C
(4) Tj = 130 ï°C
(5) Tj = 140 ï°C
(6) Tj = 150 ï°C
(7) Tj = 160 ï°C
(8) Tj = 170 ï°C
(9) Tj = 180 ï°C
(10) Tj = 190 ï°C
(11) Tj = 200 ï°C
Fig 5. BLF879P; BLF879PS electromigration (IDS(DC), total device)
BLF879P_BLF879PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 12 July 2013
© NXP B.V. 2013. All rights reserved.
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