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| BFU530A_15 Datasheet, PDF (7/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530A
NPN wideband silicon RF transistor
9.1 Graphs
,&
P$
DDD
9&( 9
Tamb = 25 ï°C.
(1) IB = 25 ïA
(2) IB = 75 ïA
(3) IB = 125 ïA
(4) IB = 175 ïA
(5) IB = 225 ïA
(6) IB = 275 ïA
(7) IB = 325 ïA
Fig 2. Collector current as a function of collector-emitter voltage; typical values
K)(
DDD
K)(
DDD
,& P$
,& P$
Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 3. DC current gain as function of collector
current; typical values
VCE = 8 V.
(1) Tamb = ï40 ï°C
(2) Tamb = +25 ï°C
(3) Tamb = +125 ï°C
Fig 4. DC current gain as function of collector
current; typical values
BFU530A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 January 2014
© NXP B.V. 2014. All rights reserved.
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