BFR93A Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFR93A
4
handbook, halfpage
F
(dB)
3
2
MCD094
f = 2 GHz
1 GHz
500 MHz
1
0
1
10
I _C (mA)
10 ²
V_CE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
4
handbook, halfpage
F
(dB)
3
MCD095
2
IC = 30 mA
10 mA
1
5 mA
0
10 ²
10 ³
f (MHz)
10 ⁴
V_CE = 8 V.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
handbook,⁴h⁰alfpage
d im
(dB)
45
MBB263
handbook,³h⁰alfpage
d2
(dB)
35
MBB264
50
40
55
45
60
65
0
10
20
30
40
I _C (mA)
V_CE = 8 V; V_O = 425 mV (52.6 dBmV);
f_p + f_q−f_r = 793.25 MHz; T_amb = 25 °C.
Measured in MATV test circuit (see Fig.2)
Fig.15 Intermodulation distortion; typical values.
50
55
0
10
20
V_CE = 8 V; V_O = 200 mV (46 dBmV);
f_p + f_q−f_r = 810 MHz; T_amb = 25 °C.
Measured in MATV test circuit (see Fig.2)
30
40
I _C (mA)
Fig.16 Second order intermodulation distortion;
typical values.
1997 Oct 29
7