74AUP1G00 Datasheet, PDF (7/16 Pages) NXP Semiconductors – Low-power 2-input NAND gate

Philips Semiconductors
74AUP1G00
Low-power 2-input NAND gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol Parameter
Conditions
Min
T_amb = 25 °C; C_L = 5 pF
t_PHL, t_PLH HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
propagation delay A or B to Y
V_CC = 0.8 V
-
V_CC = 1.1 V to 1.3 V
2.5
V_CC = 1.4 V to 1.6 V
2.0
V_CC = 1.65 V to 1.95 V
1.6
V_CC = 2.3 V to 2.7 V
1.3
T_amb = 25 °C; C_L = 10 pF
V_CC = 3.0 V to 3.6 V
1.0
t_PHL, t_PLH HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
propagation delay A or B to Y
V_CC = 0.8 V
-
V_CC = 1.1 V to 1.3 V
2.4
V_CC = 1.4 V to 1.6 V
2.4
V_CC = 1.65 V to 1.95 V
2.0
T_amb = 25 °C; C_L = 15 pF
V_CC = 2.3 V to 2.7 V
1.4
V_CC = 3.0 V to 3.6 V
1.3
t_PHL, t_PLH HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
propagation delay A or B to Y
V_CC = 0.8 V
-
V_CC = 1.1 V to 1.3 V
3.4
V_CC = 1.4 V to 1.6 V
2.8
V_CC = 1.65 V to 1.95 V
2.0
V_CC = 2.3 V to 2.7 V
1.7
T_amb = 25 °C; C_L = 30 pF
V_CC = 3.0 V to 3.6 V
1.6
t_PHL, t_PLH HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
propagation delay A or B to Y
V_CC = 0.8 V
-
V_CC = 1.1 V to 1.3 V
4.6
V_CC = 1.4 V to 1.6 V
3.0
V_CC = 1.65 V to 1.95 V
2.6
V_CC = 2.3 V to 2.7 V
2.4
V_CC = 3.0 V to 3.6 V
2.3
Typ ^[1] Max
Unit
17.5
-
ns
5.3
11.0
ns
3.8
6.8
ns
3.1
5.3
ns
2.5
4.0
ns
2.2
3.6
ns
21.0
-
ns
6.1
13.0
ns
4.4
7.9
ns
3.7
6.2
ns
3.0
4.7
ns
2.8
4.3
ns
24.5
-
ns
6.9
14.8
ns
5.0
8.9
ns
4.1
7.0
ns
3.5
5.3
ns
3.2
4.9
ns
34.8
-
ns
9.2
20.1
ns
6.5
11.8
ns
5.4
9.3
ns
4.6
7.1
ns
4.3
6.5
ns
74AUP1G00_2
Product data sheet
Rev. 02 — 29 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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