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TDA8010M Datasheet, PDF (6/11 Pages) NXP Semiconductors – Low power mixers/oscillators for satellite tuners
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Philips Semiconductors
Low power mixers/oscillators
for satellite tuners
Objective specification
TDA8010M; TDA8010AM
CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
Supplies
VCC
supply voltage
ICC
supply current
4.75 5.0
60
70
Mixer
fRF
RF frequency range
700
−
NF
total noise figure (mixer plus IF); VAGC = 0.9VCC; fi = 920 MHz −
8
not corrected for image
VAGC = 0.9VCC; fi = 2150 MHz −
13
GM
available power gain for mixer RL = 2.2 kΩ
−
10
Gmax1
maximum total gain
(mixer + IFOUT1)
fi = 920 MHz; notes 1 and 2 37
40
fi = 2150 MHz; notes 1 and 2 36
38
Gmin1
minimum total gain
(mixer + IFOUT1)
notes 1 and 2
−
−30
Gmax2
Gmin2
maximum total gain
(mixer + IFOUT2)
minimum total gain
(mixer + IFOUT2)
fi = 920 MHz; notes 1 and 2 36
39
fi = 2150 MHz; notes 1 and 2 35
37
notes 1 and 2
−
−30
ZI(RF)
input impedance (Rs + Ls)
from 920 to 2150 MHz
20
30
5
7.5
ZO(RF)
IP3
output impedance (Rp//Cp)
(open collector)
third-order interception point
fIF = 480 MHz
see Fig.4
8
12
450
550
−2
+2
IP2
second-order interception point see Fig.5
10
25
Local oscillator output
VLO
SRF
output voltage
RL = 50 Ω
spurious signal on LO output RL = 50 Ω; note 3
with respect to LO output signal
LOleak
local oscillator leakage
RF input
IF output (mixer)
87
90
−
−35
−
−50
−
−35
Oscillator
fosc
oscillator frequency range
fosc(max)
fshift
maximum oscillator frequency
oscillator frequency shift
fdrift
oscillator frequency drift
VCC = 4.5 to 5.5 V;
Tamb = −20 to +80 °C
VCC = 4.75 to 5.25 V;
at 2550 MHz
VCC = 4.75 to 5.25 V;
at 2650 MHz
∆T = 25 °C; at 2550 MHz
∆T = 25 °C; at 2650 MHz
1380 −
−
2 700
−
±350
−
±400
−
−8
−
−8
MAX.
5.25
80
2 150
10
15
−
−
−
−14
−
−
−15
40
10
16
650
−
−
93
−10
−
−
2 650
−
±500
±600
−15
−16
UNIT
V
mA
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
Ω
nH
kΩ
fF
dBm
dBm
dBµV
dB
dBm
dBm
MHz
MHz
kHz
kHz
MHz
MHz
1996 Oct 24
6
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