TDA5744 Datasheet, PDF (6/20 Pages) NXP Semiconductors – Low power mixers/oscillators for hyperband tuners

Philips Semiconductors
Low power mixers/oscillators for
hyperband tuners
Preliminary specification
TDA5744; TDA5745
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
I_O(n)
t_sc(max)
T_stg
T_amb
T_j
output current of each pin to ground:
for TDA5744; pins 1 to 6, 9 and 13 to 24
for TDA5745; pins 1 to 12, 16 and 19 to 24
maximum short-circuit time (all pins to V_CC and all pins to GND and RFGND)
IC storage temperature
operating ambient temperature
junction temperature
MIN. MAX. UNIT
−
−10 mA
−
−10 mA
−
10
s
−40 +150 °C
−20 +85 °C
−
150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
119
UNIT
K/W
CHARACTERISTICS
V_CC = 5 V; T_amb = 25 °C; unless otherwise specified; measured in Fig.11.
SYMBOL
PARAMETER
CONDITIONS
Supplies
V_CC
I_CC
V_sw(VHF)
V_sw(UHF)
I_sw(VHF)
I_sw(UHF)
supply voltage
supply current
VHF band switching voltage
UHF band switching voltage
VHF band switching current
UHF band switching current V_sw(UHF) = 5 V
IF amplifier
S₂₂
output reflection coefficient magnitude
phase
R_s
real part of Z_o = R_s + jωL_s
L_s
imaginary part of
Z_o = R_s + jωL_s
VHF mixer (including IF amplifier)
f_i(RF)
F
g_os
RF input frequency
picture carrier frequency
noise figure
f_RF = 50 MHz; see Figs 8 and 9
f_RF = 150 MHz; see Figs 8 and 9
f_RF = 300 MHz
optimum source
f_RF = 50 MHz
conductance for noise figure _{fRF = 150 MHz}
f_RF = 300 MHz
MIN. TYP. MAX. UNIT
4.5 5
5.5 V
−
58
65
mA
0
−
2
V
3
−
V_CC
V
−
−
2
µA
−
4.5 10
µA
−
−12.5 −
dB
−
1.4 −
deg
−
81
−
Ω
−
9.5 −
nH
45.25 −
−
7
−
8
−
9
−
0.7
−
0.9
−
1.5
399.25 MHz
9
dB
10
dB
11
dB
−
mS
−
mS
−
mS
1998 Mar 09
6