PSMN017-30BL_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 30 V 17 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN017-30BL
N-channel 30 V 17 mΩ logic level MOSFET in D2PAK
Table 6. Characteristics …continued
Symbol
Parameter
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
V_DS = 15 V; R_L = 1.5 Ω; V_GS = 4.5 V;
R_G(ext) = 5 Ω
I_S = 10 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 10 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 15 V
30
10 4.5
I_D
(A)
20
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3.5
30
I_D
(A)
20
Min Typ Max Unit
-
10.7 -
ns
-
9.2 -
ns
-
11.4 -
ns
-
5.1 -
ns
-
0.89 1.2 V
-
17.3 -
ns
-
6.5 -
nC
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3
10
10
2.8
0
0
1
T_j = 25 °C
V_GS(V) = 2.4
2
3
4
V_DS(V)
T_j = 175 °C
T_j = 25 °C
0
0
1
2
3
4
V_GS (V)
Fig 5. Output characteristics; drain current as a
Fig 6. Transfer characteristics; drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN017-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 April 2012
© NXP B.V. 2012. All rights reserved.
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