PN4416 Datasheet, PDF (6/9 Pages) NXP Semiconductors – N-channel field-effect transistor

Philips Semiconductors
N-channel field-effect transistor
Product specification
PN4416; PN4416A
handbook³,^.h⁵alfpage
Cis
(pF) ₃
MRC157
2.5
2
1.5
1
0.5
0
–10
–8
–6
–4
–2
0
VGS (V)
V_DS = 15 V; T_j = 25 °C.
Fig.8 Typical input capacitance.
handbook,¹h⁰a⁴lfpage
–I _G
(pA)
10 ³
10 ²
10
1
10^–1
10^–2
0
4
MRC165
ID = 1 mA
0.1 mA
I _GSS
8
12
16
20
VDG (V)
Fig.9 Gate current as a function of drain-gate
voltage, typical values.
handbook⁵, ⁰ha⁰lfpage
Ptot
(mW)
400
300
200
100
0
0
50
MRC139
100 _{Tamb (o C)} 150
Fig.10 Power derating curve.
December 1997
handbook¹, h⁰a⁰lfpage
gis , bis
(mS)
10
1
0.1
MRC160
bis
gis
0.01
10
100
1000
f (MHz)
V_DS = 15 V; V_GS = 0; T_amb = 25 °C.
Fig.11 Common source input conductance; typical
values.
6