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PMZ290UNE_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 20 V, N-channel Trench MOSFET
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NXP Semiconductors
PMZ290UNE
20 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 200 mA; Tj = 25 °C
transconductance
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 10 V; ID = 500 mA; VGS = 4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 10 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
20
-
-
V
0.5 0.75 0.95 V
-
-
1
µA
-
-
10
µA
-
-
2
µA
-
-
2
µA
-
-
500 nA
-
-
500 nA
-
290 380 mΩ
-
460 610 mΩ
-
420 620 mΩ
-
600 1100 mΩ
-
1.6 -
S
-
0.45 0.68 nC
-
0.15 -
nC
-
0.15 -
nC
-
55
83
pF
-
15
-
pF
-
7
-
pF
-
6
12
ns
-
4
-
ns
-
86
172 ns
-
31
-
ns
0.48 0.77 1.2 V
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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