PMR780SN Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel UTrenchMOS standard level FET

Philips Semiconductors
PMR780SN
N-channel µTrenchMOS™ standard level FET
2
ID
(A)
1.5
10 V
03an88
6V
5V
1
4.5 V
4V
0.5
3.5 V
VGS = 3 V
0
0
1
2 _{VDS (V)} 3
1
ID _{VDS > ID x RDSon}
(A)
0.8
03an90
0.6
0.4
0.2
Tj = 150 °C
25 °C
0
0
1
2
3
4
5
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03an89
3
4V
VGS = 3.5 V
RDSon
4.5 V
(Ω)
2
5V
1
6V
10 V
2.4
a
1.8
1.2
0.6
03aa28
0
0
0.2
0.4
0.6
0.8
1
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12666
Product data
Rev. 01 — 5 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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