PMEG2010BER_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2010BER
1 A low V_F MEGA Schottky barrier rectifier
10
I_F
(A)
1
(1)
(2)
10^−1
(3) (4) (5)
10^−2
006aab452
10^−3
10^−4
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
V_F (V)
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
10^−2
I_R
(A)
10^−3
10^−4
10^−5
10^−6
10^−7
10^−8
10^−9
0
5
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
(1)
(2)
(3)
(4)
10
006aab453
15
20
V_R (V)
Fig 5. Reverse current as a function of reverse
voltage; typical values
350
C_d
(pF)
300
006aab454
250
200
150
100
50
0
0
4
8
12
16
20
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
PMEG2010BER_1
Product data sheet
Rev. 01 — 16 April 2009
© NXP B.V. 2009. All rights reserved.
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