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PMCM440VNE_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 12 V, N-channel Trench MOSFET
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NXP Semiconductors
PMCM440VNE
12 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 12 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
VGS = 4.5 V; ID = 3 A; Tj = 150 °C
VGS = 2.5 V; ID = 3 A; Tj = 25 °C
VGS = 1.8 V; ID = 1 A; Tj = 25 °C
VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C
gfs
forward
VDS = 6 V; ID = 3 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 6 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 6 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 6 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
PMCM440VNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
Min Typ Max Unit
12
-
-
V
0.4 0.6 0.9 V
-
-
1
µA
-
-
10
µA
-
-
-10 µA
-
-
5
µA
-
-
-5
µA
-
-
200 nA
-
-
-200 nA
-
57
67
mΩ
-
71
83
mΩ
-
66
88
mΩ
-
77
110 mΩ
-
90
130 mΩ
-
17
-
S
-
5.4 -
Ω
-
5.5 8.2 nC
-
0.43 -
nC
-
1.5 -
nC
-
360 -
pF
-
160 -
pF
-
140 -
pF
-
6.3 -
ns
-
24
-
ns
-
27
-
ns
-
17
-
ns
© NXP Semiconductors N.V. 2015. All rights reserved
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