PEMH18_PUMH18_15 Datasheet, PDF(6/14 Page) NXP Semiconductors – NPN/NPN resistor-equipped transistors R1 = 4.7 k, R2 = 10 k

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PEMH18_PUMH18_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – NPN/NPN resistor-equipped transistors R1 = 4.7 k, R2 = 10 k

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NXP Semiconductors

PEMH18; PUMH18

NPN/NPN resistor-equipped transistors; R1 = 4.7 kï, R2 = 10 kï

7. Characteristics

Table 8. Characteristics

Tamb = 25 ï°C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

Per transistor

ICBO

collector-base cut-off VCB = 50 V; IE = 0 A

current

100 nA

ICEO

collector-emitter cut-off VCE = 30 V; IB = 0 A

current

VCE = 30 V; IB = 0 A;

Tj = 150 ï°C

IEBO

emitter-base cut-off

VEB = 5 V; IC = 0 A

current

ïA

600 ïA

hFE

VCEsat

DC current gain

collector-emitter

saturation voltage

VCE = 5 V; IC = 10 mA

IC = 10 mA; IB = 0.5 mA

100 mV

VI(off)

VI(on)

off-state input voltage

on-state input voltage

bias resistor 1 (input)

VCE = 5 V; IC = 100 ïA

VCE = 0.3 V; IC = 20 mA

0.9 0.3 V

2.5 1.5 -

3.3 4.7 6.1 kï

R2/R1 bias resistor ratio

1.7 2.1 2.6

collector capacitance VCB = 10 V; IE = ie = 0 A;

2.5 pF

f = 1 MHz

transition frequency

VCE = 5 V; IC = 10 mA; [1] -

230 -

MHz

f = 100 MHz

[1] Characteristics of built-in transistor

PEMH18_PUMH18

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 â 19 December 2011

6 of 14

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