PEMD13 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
PEMD13
10³
handbook, halfpage
hFE
10²
MGW403
(1)
(2)
(3)
10
1
−10^−1
−1
−10 _{IC (mA)} −10²
TR2 (PNP); V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
−1
handbook, halfpage
VCEsat
(V)
MGW404
−10^−1
(1)
(3) (2)
−10^−2
−10^−1
−1
−10 _{IC (mA)} −10²
TR2 (PNP); I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
−1
(1)
(2)
(3)
MGW405
−10²
handbook, halfpage
Vi(on)
(V)
−10
−1
MGW406
(1)
(3) ⁽²⁾
−10^−1
−10^−2
−10^−1
−1 _{IC (mA)} −10
TR2 (PNP); V_CE = −5 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
−10^−1
−10^−1
−1
−10 _{IC (mA)} −10²
TR2 (PNP); V_CE = −0.3 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.10 Input-on voltage as a function of collector
current; typical values.
2001 Sep 11
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