PDTC144EMB_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

NXP Semiconductors
PDTC144EMB
NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
2.0
C_c
(pF)
1.6
1.2
0.8
006aac756
10³
f_T
(MHz)
10²
006aac757
0.4
0.0
0
10
20
30
40
50
V_CB (V)
f = 1 MHz; T_amb = 25 °C
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
8. Test information
10
10^-1
1
10
10²
I_C (mA)
V_CE = 5 V; T_amb = 25 °C
Fig 9. Transition frequency as a function of collector
current; typical values of built-in transistor
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTC144EMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 June 2012
© NXP B.V. 2012. All rights reserved.
6 of 11