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| PBSS4330PA Datasheet, PDF (6/15 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
collector-base
cut-off current
VCB = 30 V; IE = 0 A
-
VCB = 30 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter
VCE = 30 V; VBE = 0 V
-
cut-off current
IEBO
emitter-base
VEB = 5 V; IC = 0 A
-
cut-off current
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 2 V
IC = 0.5 A
IC = 1 A
IC = 2 A
IC = 3 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 2 A; IB = 100 mA
IC = 3 A; IB = 300 mA
IC = 3 A; IB = 300 mA
[1]
300
270
230
180
[1] -
[1] -
[1] -
[1] -
[1] -
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter
turn-on voltage
IC = 2 A; IB = 100 mA
IC = 3 A; IB = 300 mA
VCE = 2 V; IC = 1 A
[1] -
[1] -
[1] -
td
delay time
tr
rise time
ton
turn-on time
VCC = 9 V; IC = 2 A;
-
IBon = 0.1 A;
-
IBoff = â0.1 A
-
ts
storage time
-
tf
fall time
-
toff
turn-off time
-
fT
transition frequency VCE = 5 V; IC = 100 mA;
100
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
f = 1 MHz
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Typ Max Unit
-
100 nA
-
50 μA
-
100 nA
-
100 nA
465 -
435 700
370 -
310 -
40 60 mV
80 110 mV
155 220 mV
220 300 mV
75 100 mΩ
0.95 1.1 V
1.07 1.2 V
0.76 1
V
11 -
52 -
63 -
230 -
40 -
270 -
210 -
ns
ns
ns
ns
ns
ns
MHz
21 30 pF
PBSS4330PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 19 April 2010
© NXP B.V. 2010. All rights reserved.
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