LX1214E500X Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Preliminary specification
LX1214E500X
handbook, full pagewidth
BIAS CIRCUIT
R1
TR1
R2
P1
R3 C5
D1
D2
PREMATCHING TEST
CIRCUIT
VCC
C4
C3
F1
L2
L1
DUT
MLC727
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5)
COMPONENT
DESCRIPTION
TR1
transistor, BD239 or equivalent
C1, C2
DC blocking chip capacitor
C3, C4
feedthrough bypass capacitor
C5
electrolytic capacitor
D1
diode BY239 or equivalent; note 1
D2
diode BY239 or equivalent; note 2
L1
3.5 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
linear potentiometer
R1
resistor
R2
resistor
R3
resistor
F1
ferrite bead
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
VALUE
ORDERING INFORMATION
100 pF
1500 pF
10 µF, >30 V
ATC 100A1201kp
Erie1250-003
4.7 kΩ
100 Ω, 0.25 W
1 kΩ, 0.25 W
56 Ω, 0.25 W
Philips tube, 12NC = 4330 030 43081
4.2 × 2.2 × 3.2 mm (4B1)
1997 Feb 18
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