BZX585 Datasheet, PDF (6/10 Pages) NXP Semiconductors – Voltage regulator diodes

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Table 2 Per type BZX585-B/C27 to B/C75
T_amb = 25 °C unless otherwise specified.
BZX585-
B or C
XXX
WORKING VOLTAGE
V_Z (V)
at I_Ztest = 2 mA
Tol. ± 2 % (B) Tol. ± 5 % (C)
DIFFERENTIAL RESISTANCE
r_dif (Ω)
at I_Ztest = 0.5 mA at I_Ztest = 2 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX.
27
26.46 27.54 25.65 28.35 65
300
25
80
30
29.40 30.60 28.50 31.50 70
300
30
80
33
32.34 33.66 31.35 34.65 75
325
35
80
36
35.28 36.72 34.20 37.80 80
350
35
90
39
38.22 39.78 37.05 40.95 80
350
40
130
43
42.14 43.86 40.85 45.15 85
375
45
150
47
46.06 47.94 44.65 49.35 85
375
50
170
51
49.98 52.02 48.45 53.55 90
400
60
180
56
54.88 57.12 53.20 58.80 100
425
70
200
62
60.76 63.24 58.90 65.10 120
450
80
215
68
66.64 69.36 64.60 71.40 150
475
90
240
75
73.50 76.50 71.25 78.75 170
500
95
255
TEMP. COEFF.
S_Z (mV/K)
at I_Ztest = 2 mA
(see figs 3 and 4)
DIODE CAP.
C_d (pF)
at f = 1 MHz;
V_R = 0 V
TYP.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
MAX.
50
50
45
45
45
40
40
40
40
35
35
35
NON-REPETITIVE
PEAK REVERSE
CURRENT
I_ZSM (A) at t_p = 100 µs
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_th(j-a)
R_th(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm² Cu area at cathode tab.
2. Solder point at cathode tab.
VALUE
350
65
UNIT
K/W
K/W