English
Language : 

BYC30-600P_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – Hyperfast power diode
◁
NXP Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IRM
peak reverse recovery IF = 30 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
BYC30-600P
Hyperfast power diode
Min Typ Max Unit
-
2
2.75 V
-
1.38 1.8 V
-
-
10
µA
-
-
1
mA
-
50
-
nC
-
280 -
nC
-
-
35
ns
-
-
35
ns
-
70
-
ns
-
3.5 -
A
-
7.6 -
A
BYC30-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
6 / 11
 ▷