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BUK9Y58-75B_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
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NXP Semiconductors
BUK9Y58-75B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10; see Figure 11
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = +15 V; Tj = 25 °C
VDS = 0 V; VGS = -15 V; Tj = 25 °C
VGS = 4.5 V; ID = 10 A; Tj = 25 °C
VGS = 5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C
ID = 10 A; VDS = 60 V; VGS = 5 V;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 3 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
75 -
-
V
70 -
-
V
0.5 -
-
V
1.25 1.65 2.15 V
-
-
2.45 V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
61 mΩ
-
-
145 mΩ
-
52
58
mΩ
-
47
53
mΩ
-
10.7 -
nC
-
2.3 -
nC
-
5
-
nC
-
853 1137 pF
-
106 127 pF
-
52
71
pF
-
15
-
ns
-
16 -
ns
-
30
-
ns
-
9
-
ns
-
0.85 1.2 V
-
53
-
ns
-
122 -
nC
BUK9Y58-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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