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| BUK9Y4R8-60E_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 | |||
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NXP Semiconductors
BUK9Y4R8-60E
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Conditions
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
-
18.1 -
nC
-
5890 7853 pF
-
506 607 pF
-
276 378 pF
-
28
-
ns
-
53
-
ns
-
80
-
ns
-
47
-
ns
-
0.78 1.2 V
-
29
-
ns
-
28
-
nC
360
ID
VGS(V) = 10
(A)
240
003aaj144
4.5
3.5
10
RDSon
(mΩ)
7.5
003aaj145
5
3
120
2.8
2.5
2.6
2.4
0
0
2
VDS(V) 4
0
0
2.5
5
7.5 VGS(V) 10
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK9Y4R8-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
6 / 13
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