BUK766R0-60E_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK766R0-60E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; Fig. 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.84 1.2 V
-
35
-
ns
-
43
-
nC
240
V_GS(V) = 10
8
I_D
(A)
160
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6
20
R_DSon
(mΩ)
15
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10
5.5
80
5
5
4.5
0
0
1
2
3 _VDS(V) 4
0
0
5
10
15 _VGS(V) 20
Fig. 6.
T_j = 25 °C; t_p = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
300
I_D
(A)
200
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5
V_GS(th)
(V)
4
3
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max
typ
T_j = 175 °C
100
T_j = 25 °C
2
min
1
0
0
2
4
6 _VGS(V) 8
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
BUK766R0-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
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