BUK764R2-80E_15 Datasheet, PDF(6/13 Page) NXP Semiconductors – N-channel TrenchMOS standard level FET

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BUK764R2-80E_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

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NXP Semiconductors

BUK764R2-80E

N-channel TrenchMOS standard level FET

Symbol

Parameter

Conditions

Ciss

input capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Coss

output capacitance

Tj = 25 Â°C; Fig. 15

Crss

reverse transfer

capacitance

td(on)

turn-on delay time

rise time

VDS = 60 V; RL = 2.4 Î©; VGS = 10 V;

RG(ext) = 5 Î©

td(off)

turn-off delay time

fall time

internal drain

from upper edge of mounting base to

inductance

centre of die

internal source

measured from source lead to source

inductance

bond pad ; Tj = 25 Â°C

Source-drain diode

VSD

source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 Â°C; Fig. 16

trr

reverse recovery time IS = 20 A; dIS/dt = -100 A/Âµs; VGS = 0 V;

recovered charge

VDS = 25 V

180

5.5

(A)

120

003aah694

RDSon

(mÎ©)

Min Typ Max Unit

7820 10426 pF

753 904 pF

424 581 pF

30.6 -

45.5 -

80.9 -

53.2 -

2.5 -

7.5 -

0.79 1.2 V

49.2 -

003aah695

4.5

VGS(V) = 4

3 VDS(V) 4

15 VGS(V) 20

Fig. 6.

Tj = 25 Â°C; tp = 300 Î¼s

Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

BUK764R2-80E

Product data sheet

All information provided in this document is subject to legal disclaimers.

5 October 2012

6 / 13

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