BUK7626-100B_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
150
I_D
(A)
Label is V_GS (V)
20
100
50
0
0
2
4
10
6
03nm40
8
7.5
7
6.5
6
5.5
5
4.5
8
10
V_DS (V)
50
R_DSon
(mΩ)
43
36
29
22
15
5
03nm39
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
35
g_fs
(S)
28
03nm37
10^−3
21
10^−4
14
10^−5
7
10^−6
0
2
4
6
V_GS (V)
0
0
25
50
75
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7626-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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