BUK7520-100A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7520-100A
N-channel TrenchMOS standard level FET
250
I_D
(A)
200
150
100
V_GS (V) = 10
03nd53
20
9
8
7.5
6.5
50
5.5
0
4.5
0
2
4
6
8
10
V_DS (V)
22
R_DSon
(mΩ)
20
18
16
14
12
5
03nd52
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state voltage as a function of
function of drain-source voltage; typical values
gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
03aa35
min typ max
60
g_fs
(S)
40
03nd50
10^−4
20
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7520-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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