BUK7225-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7225-55A
N-channel TrenchMOS standard level FET
I_D ¹⁸⁰
(A)
160
140
120
100
80
60
40
20
0
0
V_GS (V) = 12
14 16
03nb71
18
20
11
9.5
8.5
7.5
6.5
5.5
4.5
2
4
6
8
10
V_DS (V)
35
R_DSon
(mΩ)
30
03nb70
25
20
15
10
6
8 10 12 14 16 18 20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
25
g_fs
(S)
20
03nb68
10^−3
15
10^−4
10
10^−5
5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7225-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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