BUK7208-40B Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7208-40B
TrenchMOS™ standard level FET
400
20
ID
16
(A)
14
300 ¹²
200
100
0
0
2
03nl41
Label is VGS (V)
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
16
RDSon
(mΩ)
12
03nl40
8
4
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
03nl42
2
RDSon
78
6.5
10
a
(mΩ)
6
15
1.5
03np03
10
1
20
5
0.5
Label is VGS (V)
0
0
100
200
300
400
ID (A)
T_j = 25 °C; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
10
80
150
220
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12228
Product data
Rev. 02 — 22 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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