BUK6C2R1-55C Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
400
ID
(A)
300
VGS (V) =10.0 6.0 5.0
003aaf967
4.5
4.0
300
ID
(A)
200
003aaf968
200
100
0
0
0.5
1
T_j = 25 °C; t_p = 300 μs
3.8
3.6
3.4
3.3
1.5
2
VDS (V)
100
0
0
Tj = 175 °C
Tj = 25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
400
gfs
(S)
300
003aaf969
10
RDSon
(mΩ)
8
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6
200
4
100
2
0
0
100
200
300
ID (A)
0
0
5
10
15
20
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK6C2R1-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 January 2012
© NXP B.V. 2012. All rights reserved.
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