BUK217-50YT Datasheet, PDF (6/8 Pages) NXP Semiconductors – TOPFET high side switch SMD version

Philips Semiconductors
TOPFET high side switch
SMD version
Product specification
BUK217-50YT
OVERLOAD PROTECTION / DETECTION CHARACTERISTICS
6 V ≤ V_BG ≤ 35 V, limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_L(lim)
V_BL(TO)
Overload protection
Load current limiting
V_BL = V_BG
V_BG ≥ 9 V
10
15 21¹
A
Short circuit load detection Status indication only
Battery load threshold voltage²
V_BG = 16 V
8
10 12
V
V_BG = 35 V 15
20
25
V
Overtemperature protection
T_j(TO)
Threshold junction
temperature³
150 170 190 ˚C
SWITCHING CHARACTERISTICS
T_mb = 25 ˚C, V_BG = 13 V, for resistive load R_L = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
t_{d on}
dV/dt_on
During turn-on
Delay time
Rate of rise of load voltage
from input going high
to 10% V_L
30% to 70% V_L
t _on
Total switching time
to 90% V_L
t_{d off}
dV/dt_off
t _off
During turn-off⁴
Delay time
Rate of fall of load voltage
Total switching time
from input going low
to 90% V_L
70% to 30% V_L
to 10% V_L
CAPACITANCES
T_mb = 25 ˚C; f = 1 MHz; V_IG = 0 V. designed in parameters.
SYMBOL PARAMETER
CONDITIONS
C_ig
Input capacitance
C_bl
Output capacitance
C_sg
Status capacitance
V_BG = 13 V
V_BL = 13 V
V_SG = 5 V
MIN. TYP. MAX. UNIT
-
40 60 µs
-
0.5
1 V/µs
-
180 250 µs
-
75 100 µs
-
0.5
1 V/µs
-
105 140 µs
MIN.
-
-
-
TYP.
15
635
11
MAX.
20
900
15
UNIT
pF
pF
pF
1 At -40˚C the maximum may be exceeded for Vbg>25V and tp>200µs because of the high power dissipation. It will not exceed 25A prior to the
operation of the Overtemperature protection.
2 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage.
3 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been
toggled low.
4 For measurement purposes an Input pulse of 1.5ms is used to ensure device is stabilised in the on state
September 2001
6
Rev 1.300