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| BUJ302A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
BUJ302A
NPN power transistor
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Static characteristics
ICES
ICEO
V(BR)EBO
collector-emitter cut-off current VBE = 0 V; VCE = 1050 V;
-
Tmb = 25 °C
collector-emitter cut-off current VCE = 400 V; IB = 0 A; Tmb = 25 °C
-
open-collector emitter-base
IB = 1 mA; IC = 0 A; Tmb = 25 °C
15
breakdown voltage
VCEOsus
collector-emitter sustaining
voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
Tmb = 25 °C; see Figure 6;
see Figure 7
[1] 400
VCEsat
collector-emitter saturation
voltage
IC = 1 A; IB = 0.2 A; Tmb = 25 °C;
see Figure 8; see Figure 9
[1] -
IC = 3.5 A; IB = 1 A; Tmb = 25 °C;
see Figure 8; see Figure 9
[1] -
VBEsat
base-emitter saturation voltage IC = 3.5 A; IB = 1 A; Tmb = 25 °C;
see Figure 10
[1] -
hFE
DC current gain
IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; [1] 48
see Figure 11
IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; [1] 25
see Figure 12
Dynamic characteristics
ts
storage time
tf
fall time
IC = 2.5 A; IBon = 0.5 A;
-
IBoff = -0.5 A; RL = 60 â¦;
-
VBB = -5 V; Tmb = 25 °C; resistive
load; tp = 300 µs; see Figure 13;
see Figure 14
[1] Pulse test: pulse duration ⤠300 µs, duty cycle ⤠2 %
Typ Max Unit
0.2 10 µA
10
250 mA
19
-
V
470 -
V
0.15 0.5 V
0.6 1.5 V
1.1 1.5 V
66
100
42
50
-
3.5 µs
-
500 ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 6. Test circuit for collector-emitter sustaining
voltage
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig 7. Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJ302A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 28 March 2011
© NXP B.V. 2011. All rights reserved.
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