BUJ103AX_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ103AX
IC (A)
9
8
7
6
5
4
3
2
1
0
0
Fig.13.
100
200
300
400
500
600
VCEclamp (V)
700
800
900
Reverse bias safe operating area. T_j ≤ T_{j max}
VCC
IC (A)
100
10
Icm max
Ic max
1
0.1
0.01
Duty Cycle = 0.01
II
tp =
20us
(1)
50us
100us
200us
I
500us
1ms
2ms
(2)
DC
III
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.14. Test circuit for reverse bias
safe operating area.
V_cl ≤ 1000V; V_cc = 150V; V_BB = -5V; L_B = 1µH;
L_c = 200µH
0.001
1
10
100
1,000
VCEclamp (V)
Fig.15. Forward bias safe operating area. T_hs ≤ 25 ˚C
(1) P_tot max and P_tot peak max lines.
(2) Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
R_BE ≤ 100 Ω and t_p ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
August 1998
5
Rev 1.000