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BSS138AKA_15 Datasheet, PDF (6/16 Pages) NXP Semiconductors – 60 V, single N-channel Trench MOSFET
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NXP Semiconductors
BSS138AKA
60 V, single N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 A; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; pulsed;
resistance
tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tj = 150 °C
VGS = 4.5 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 150 mA; pulsed;
transconductance
tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 30 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
BSS138AKA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 April 2015
Min Typ Max Unit
60
-
-
V
0.8 1.2 1.5 V
-
-
1
µA
-
-
10
µA
-
-
3.5 µA
-
-
-3.5 µA
-
-
1
µA
-
-
-1
µA
-
-
0.5 µA
-
-
-0.5 µA
-
2.7 4.5 Ω
-
5.5 9.2 Ω
-
3
5.2 Ω
-
4
13
Ω
320 -
-
mS
-
0.39 0.51 nC
-
0.1 -
nC
-
0.1 -
nC
-
13
20
pF
-
2.6 -
pF
-
1.1 -
pF
-
5
10
ns
-
6
-
ns
-
36
72
ns
© NXP Semiconductors N.V. 2015. All rights reserved
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