BLF8G22LS-160BV_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF8G22LS-160BV
Power LDMOS transistor
8.5 2-carrier W-CDMA

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V_DS = 32 V; I_Dq = 1300 mA.
(1) G_p at f = 2115 MHz
(2) G_p at f = 2140 MHz
(3) G_p at f = 2165 MHz
(4) _D at f = 2115 MHz
(5) _D at f = 2140 MHz
(6) _D at f = 2165 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values









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V_DS = 32 V; V_GS = 32 V; f = 5 MHz;  = 46 %.
(1) ACPR_5M at f = 2115 MHz
(2) ACPR_5M at f = 2140 MHz
(3) ACPR_5M at f = 2165 MHz
(4) ACPR_10M at f = 2115 MHz
(5) ACPR_10M at f = 2140 MHz
(6) ACPR_10M at f = 2165 MHz
Fig 5.
Adjacent channel power ratio (5MHz) and
adjacent channel power ratio (10MHz) as
function of load power; typical values

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3_/G%P
V_DS = 32 V; I_Dq = 1300 mA.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 6. Peak to average power ratio as a function of load power; typical values
BLF8G22LS-160BV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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